| PART |
Description |
Maker |
| MGW14N60ED-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGP7N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MMG05N60D-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| MGS13002DD MGS13002D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
MOTOROLA[Motorola, Inc]
|
| MTM8N20 MTM15N45 |
N-Channel Enhancement-Mode Silicon Gate
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conductor P...
|
| LP821 |
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
| SR703 |
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
| LP722 |
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
| LY402 |
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
